t1020w T1030W ? november 1996 snubberless triac symbol parameter value unit i t(rms) rms on-state current (360 conduction angle) tc= 90 c10a i tsm non repetitive surge peak on-state current (t j initial = 25 c) tp = 16.7 ms (1 cycle, 60 hz) 110 a tp = 10 ms (1/2 cycle, 50 hz) 125 i 2 ti 2 t value (half-cycle, 50 hz) tp = 10 ms 78 a 2 s di/dt critical rate of rise of on-state current gate supply : i g = 500 ma di g /dt = 1 a/ m s. repetitive f = 50 hz 20 a/ m s non repetitive 100 t stg t j storage temperature range operating junction temperature range - 40 to + 150 - 40 to + 125 c tl maximum lead temperature for soldering during 10s at 4.5 mm from case 260 c absolute ratings (limiting values) i trms =10a v drm =v rrm = 400v to 800v excellent switching performances insulating voltage = 1500v (rms) u.l. recognized : e81734 features symbol parameter t1020 / 1030-xxxw unit 400 600 700 800 v drm v rrm repetitive peak off-state voltage t j = 125 c 400 600 700 800 v the t1020/1030w triacs use high performance glass passivated chip technology, housed in a fully molded plastic isowatt220ab package. the snubberless tm concept offers suppres- sion of r-c network, and is suitable for applica- tions such as phase control and static switch on inductive and resistive loads. description isowatt220ab (plastic) a 1 a 2 g a 1 a 2 g 1/5
p g (av) =1w p gm =10w(tp =20 m s) i gm =4a(tp=20 m s) gate characteristics (maximum values) symbol parameter value unit rth(j-a) junction to ambient 50 c/w rth(j-c) junction to case for a.c (360 conduction angle) 3.0 c/w thermal resistances symbol test conditions quadrant t1020 t1030 unit i gt v d =12v (dc) r l =33 w tj= 25 c i-ii-iii max 20 30 ma v gt v d =12v (dc) r l =33 w tj= 25 c i-ii-iii max 1.5 v v gd v d =v drm r l =3.3k w tj= 125 c i-ii-iii min 0.2 v tgt v d =v drm i g = 500ma dl g /dt= 3a m s tj= 25 c i-ii-iii typ 2 m s i h *i t = 100ma gate open tj= 25 c max 35 50 v tm *i tm = 14a tp= 380 m s tj= 25 c max 1.5 v i drm i rrm v drm rated v rrm rated tj= 25 c max 10 m a tj= 125 c max 2 ma dv/dt * linear slope up to v d =67%v drm gate open tj= 125 c min 200 300 v/ m s (dv/dt)c * (di/dt)c = 5.3 a/ms (see note) tj= 125 c min 10 20 v/ m s * for either polarity of electrode a2 voltage with reference to electrode a1. note : in usual applications where (di/dt)c is below 5.3 a/ms, the (dv/dt)c is always lower than 10v/ m s, and, therefore, it is unnecessary to use a snuber r-c network accross t1020w / T1030W triacs. electrical characteristics ? t1020w / 1030w 2/5
012345678910 0 2 4 6 8 10 12 14 180 o = 180 o = 120 o =90 o =60 o =30 o t(rms) i (a) p(w) fig.1 : maximum power dissipation versus rms on-state current. 0 102030405060708090100110120130 0 2 4 6 8 10 12 = 180 o tcase( c) o i (a) t(rms) fig.3 : rms on-state current versus case tempera- ture. 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 igt tj( c) o ih -40 -20 0 20 40 60 80 100 120 140 igt[tj] igt[tj=25 c] o ih[tj] ih[tj=25 c] o fig.5 : relative variation of gate trigger current and holding current versus junction temperature. p(w) 0 102030405060708090100110120130 0 2 4 6 8 10 12 14 -85 -95 -105 -115 -125 rth = 0 c/w 2.5 c/w 5c/w 7c/w o o o o tamb ( c) o tcase ( c) o fig.2 : correlation between maximum power dissi- pation and maximum allowable temperature (tamb and tcase) for different thermal resistances heatsink + contact. 1e-3 1e-2 1e-1 1e +0 1e+1 1e+2 5e+2 0.01 0.1 1 zth/rth zth (j-c) zt h( j-a) tp (s) fig.4 : thermal transient impedance junction to case and junction to ambient versus pulse dura- tion. 110100 1000 0 20 40 60 80 100 120 tj initial = 25 c o number of cycles i (a) tsm fig.6 : non repetitive surge peak on-state current versus number of cycles. ? t1020w / 1030w 3/5
i (a). i 2 t(a 2 s) tsm 110 1 10 100 1000 tj initial = 25 c o i tsm tp(ms) i 2 t fig.7 : non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of i 2 t. 00.511.522.533.544.555.56 1 10 100 1000 i (a) tm tj initial 25 c o tj max tj max vto =0.9v rt =0.038 v (v) tm fig.8 : on-state characteristics (maximum values). ? t1020w / 1030w 4/5
package mechanical data isowatt220ab cooling method : c marking : type number weight : 2.1g recommended torque value : 0.55 m.n. maximum torque value : 0.70 m.n. information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-tho mson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1996 sgs-thomson microelectronics - printed in italy - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. ref. dimensions millimeters inches min. max. min. max. a 10 10.4 0.393 0.409 b 15.9 16.4 0.626 0.645 b1 9.8 10.6 0.385 0.417 c 28.6 30.6 1.126 1.204 d 16 typ 0.630 typ e 9 9.3 0.354 0.366 h 4.4 4.6 0.173 0.181 i 3 3.2 0.118 0.126 j 2.5 2.7 0.098 0.106 l 0.4 0.7 0.015 0.027 m 2.5 2.75 0.098 0.108 n 4.95 5.2 0.195 0.204 n1 2.4 2.7 0.094 0.106 o 1.15 1.7 0.045 0.067 p 0.75 1 0.030 0.039 ? t1020w / 1030w 5/5
|
